Ikhebula Elivikelwe Le-Voltage Eliguquguqukayo Eligoqekayo Eliphakathi – Elimnyama elingu-2.5mm² 30kVDC Lokukhiqiza Ama-Semiconductor
Isicelo: Imboni Yokukhiqiza Ama-semiconductor, Indawo Yesigaba: 2.5mm² (0.20 / 0.35 / 0.50 / 0.75 / 1.0 / 1.5 / 2.5 / 4.0 / 6.0 / 10.0mm² Ongakukhetha), I-voltage: 30kVDC (10 / 20 / 30 / 50 / 80 / 100 / 120 / 150 kV DC Ongakukhetha), Umbala wekhebula: Okumnyama (Okubomvu / Okuphuzi / Okuluhlaza okwesibhakabhaka / Okumhlophe / Okumnyama / Okuluhlaza / Okunsundu / Okuwolintshi / Okumpunga Ongakukhetha), Umqhubi: I-TC Stranded Class 5, Ukuvikela: Inhlanganisela Yerabha Eguquguqukayo Emhlophe Yesilikhoni Esimhlophe, Isikrini: Ukuluka ucingo lwethusi olufakwe ethini lwe-TCWB, Isigqoko: Inhlanganisela Yenjoloba Eguquguqukayo Emnyama Yesilikhoni Esimnyama
Le khebula elivikelwe ukuluka okuguquguqukayo okuphakathi elisebenza kahle kakhulu linokwakhiwa okungu-2.5mm² komgogodla owodwa, okwenzelwe ngqo imishini yokukhiqiza ye-semiconductor edinga amandla angu-30kVDC anokuguquguquka okumangalisayo, ukumelana nokushisa okungu-180°C, kanye nokuvikelwa okuqinile kwe-EMI ezindaweni zokuhlanza nezokushaja.
Umqhubi we-TC stranded Class 5 uhlinzeka ngentambo encane kakhulu ukuze kube nokuguquguquka okuphezulu, ukuqhuba kahle kakhulu, kanye nokumelana nokugqwala, okubalulekile ekuxhunyweni kwangaphakathi kwethuluzi le-semiconductor. Ukufakwa kwerabha ye-silicone eguquguqukayo emhlophe kunikeza amandla amahle kakhulu e-dielectric okumelana ne-30kVDC, ukuzinza kokushisa kufika ku-180°C, kanye nezakhiwo eziphansi zokukhipha igesi ezibalulekile ezindaweni zokuhlanza. Isikrini se-TCWB esifakwe ethini sentambo yethusi sinikeza ukuvikelwa okuqinile kwe-EMI kwezinhlelo zokulawula inqubo ye-semiconductor ebucayi kanye nokulinganisa. Igobolondo lerabha ye-silicone eguquguqukayo emnyama linikeza ukuvikelwa okuphezulu komshini, ukumelana kwamakhemikhali namagesi okucubungula i-semiconductor, ukuzinza kwe-UV, kanye nokubukeka kobungcweti okufanelekela izindawo zokuhlanza.
Nge-Class 5 stranding ukuze kube nokuguquguquka okuphezulu, izindawo zesigaba kusukela ku-0.20mm² kuya ku-10.0mm², izilinganiso ze-DC voltage kusukela ku-10kV kuya ku-150kV, kanye nezinketho eziningi zemibala, le nkundla yekhebula ivumelana nezinhlelo zokusebenza eziningi zokukhiqiza ze-semiconductor ezidinga izintambo ze-voltage eziphakathi neziguquguqukayo nezivivinyiwe.
| Ipharamitha | Imininingwane |
|---|---|
| Uhlobo | Ikhebula elivikelwe nge-voltage ephakathi nendawo eliguquguqukayo lokuluka |
| Ukucushwa | Umongo owodwa |
| Umqhubi | I-TC stranded Class 5 |
| Izindawo Zesigaba | 0.20 / 0.35 / 0.50 / 0.75 / 1.0 / 1.5 / 2.5 / 4.0 / 6.0 / 10.0mm² ongakukhetha |
| Ukuvikela | Inhlanganisela yerabha ye-silicone eguquguqukayo, emhlophe |
| Isikrini | Ukuluka ucingo lwethusi olufakwe ethini lwe-TCWB |
| Umgodla | Inhlanganisela yerabha ye-silicone eguquguqukayo, emnyama |
| Isilinganiso se-Voltage | 30kVDC (10-150kVDC uma uthanda) |
| Isilinganiso Sokushisa | 180°C |
| Izinketho Zombala | Obomvu, ophuzi, oluhlaza okwesibhakabhaka, omhlophe, omnyama, oluhlaza okotshani, onsundu, o-orenji, ompunga |
| Isicelo | Imboni yokukhiqiza ye-semiconductor |
Le ntambo ye-voltage ephakathi yenzelwe ngqo izidingo ezidingayo zokukhiqiza i-semiconductor. Ukugoba kwe-Class 5 kunikeza ukuguquguquka okuphezulu kokuhambisa okuqinile kumathuluzi e-semiconductor. Ukufakwa kwe-silicone kanye ne-sheath kunikeza ukuphuma okuphansi kwegesi ezindaweni zokuhlanza (amakamelo, izingidi zomthwalo) kanye nokumelana kwamakhemikhali namagesi okucubungula. Ukuluka kwe-TCWB kuqinisekisa ukuvikelwa okuqinile kwe-EMI kokulawula inqubo ebucayi. I-sheath emnyama inikeza ukubukeka kobungcweti futhi ifihla izimpawu zokuphatha ezindaweni ezihlanzekile.
- Imishini Yokufakelwa I-Ion: Ihlinzeka ngokuxhumeka kwe-voltage ephakathi kwezinsiza zamandla ze-ion beam kanye namakholomu okusheshisa
- Izinhlelo Zokuqopha Nge-Plasma: Ihlinzeka ngezintambo ze-HV ezithembekile zokukhiqizwa kwe-plasma kanye nokunikezwa kwamandla okukhetha
- Ukususwa Komusi Ongokoqobo (i-PVD): Ihlinzeka ngokuxhumeka kwamandla e-cathode akhipha amathuluzi okubeka ifilimu amancane
- Ukususwa Komusi Wekhemikhali (i-CVD): Ihlinzeka ngezintambo ze-HV zezinhlelo ze-CVD ezithuthukisiwe nge-plasma
- Amarobhothi Okuphatha I-Wafer: Ivumela ukuxhumana kwe-HV okuguquguqukayo kwama-chucks nama-gripper e-electrostatic wafer
- Amathuluzi Okuhlola Nokulinganisa: Izinsiza zekhebula le-HV ezivivinyiwe zezinhlelo zokuhlola imisebe ye-electron
- Impendulo Yegumbi Lokuhlanza I-Vacuum: Ihlinzeka ngokuxhumeka kwe-HV okuphansi kwegesi kwezintambo zangaphakathi zegumbi
- Cela Idatha Yesampula Nokuhambisana Nemithetho - Hlola ikhebula kuhlelo lwakho lokusebenza
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Landa Imininingwane Yobuchwepheshe - Thola idatha ephelele yokusebenza kagesi
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Xhumana neThimba Lethu Lobunjiniyela - Xoxa ngezidingo zakho zokuxhuma izintambo zikagesi
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Thola Isilinganiso Sokuncintisana - Izixazululo ze-OEM/ODM ziyatholakala
Imibuzo Evame Ukubuzwa
Q1: Kungani ukufakelwa kwe-silicone kufaneleka ekukhiqizweni kwe-semiconductor?
A: I-Silicone inikeza izakhiwo eziphansi zokukhipha uphethiloli ezibalulekile ezindaweni zokuhlanza umoya, ukuguquguquka okuhle kakhulu, kanye nokumelana namakhemikhali kumagesi okucubungula ama-semiconductor.
Q2: Yiziphi izilinganiso zamandla kagesi ezitholakalayo kule ntambo?
A: Izinketho ze-DC voltage: 10kV, 20kV, 30kV, 50kV, 80kV, 100kV, 120kV, 150kV ukuze kuhambisane nezidingo zamathuluzi e-semiconductor.
Q3: Yimaphi amasayizi omqhubi atholakalayo?
A: Izindawo zesigaba: 0.20, 0.35, 0.50, 0.75, 1.0, 1.5, 2.5, 4.0, 6.0, 10.0mm² ngezidingo zamanje ezahlukahlukene.
Umbuzo 4: Kungani ithusi elifakwe isiliva noma i-nickel lingadingeki kulokhu kusetshenziswa?
A: Ithusi elifakwe emathinini le-TC linikeza ukumelana nokugqwala okwanele ezindaweni eziningi zokukhiqiza ze-semiconductor; i-SPC noma i-NPC iyatholakala uma iceliwe ezimweni ezimbi kakhulu.
Umbuzo 5: Ingabe le ndawo yokuhlanza ikhebula iyahambisana?
A: Yebo, izinto ze-silicone ziyahambisana negumbi lokuhlanza futhi azikwazi ukukhiqizwa kakhulu futhi azikwazi ukumelana namakhemikhali nezinto zokuhlanza ezivamile.